Transistors Diodes IC SMD Type Product specification FMS4 ■ Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5.0 V Collector Current -Continuous IC -50 mA Collector Power Dissipation(TOTAL) PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= -50μA, IE=0 -120 Collector-to-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -120 V Emitter-to-base breakdown voltage V(BR)EBO IE= -50 μA， IC=0 -5.0 V Collector cutoff current IcBO VCB= -100 V , IE=0 Collector cutoff current IEBO VCE= -4.0V , IC=0 DC current gain hFE Collector-emitter saturation voltage Transition frequency VCE= -60V, IC= -2.0mA V 180 VCE= -12V, IC= -2mA,f=100MHz μA -0.5 μA 820 VCE(sat) IC=-10 mA, IB= -1.0mA fT -0.5 -0.5 140 V MHz ■ Marking Marking S4 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1