IC MOSFET SMDType Type SMD Product specification FTD2011 TSSOP-8 ■ Features Unit: mm ● RDS(ON)=30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-Source Voltage Parameter VDS 20 V Gate-Source Voltage VGS ±10 V Drain-Current -Continuous -Pulsed Power Dissipation ID 5 A (NOTE 1) IDM 20 A (NOTE 2) PD 1.3 W RθJA 96 ℃/W Tj.Tstg -55 to 150 ℃ Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm2×0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC MOSFET SMDType Type SMD Product specification FTD2011 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS VGS=0V,ID=1mA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage IGSS VGS=±8V,VDS=0V ±10 μA Cutoff Voltage 20 VGS(off) VDS=10V, ID=1mA Drain- Source on-state Resistance On-State Drain Current RDS(ON) ID(ON) Forward Transconductance gFS Input Capacitance Ciss V 1.3 V VGS=4V,ID=4A 0.5 30 mΩ VGS=2.5V,ID=2A 45 mΩ VDS=5V,VGS=4.5V 18 A VDS=5V,ID=5A 5 S 900 VDS = 10V, VGS = 0V,f =1.0MHZ pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time tD(on) 15 ns tr 150 ns 100 ns Rise Time Turn-Off Delay Time tD(off) Fall Time VDD=10V,ID=4A,VGS=4V, RL=2.5Ω,RGEN=50Ω 260 pF 200 pF tf 150 ns Total Gate Charge Qg 32 nC Gate-S ource Charge Qgs 1.5 nC Gate-Drain Charge Qgd 6 nC VDS = 10V, ID = 4A,VGS = 10V ■ Marking Marking 2011 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2