SMD Type Product specification FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 20 Amp pulse current. 4 Low saturation voltage. High gain. Extremely low equivalent on-resistance; RCE(sat) = 50mÙ at 5A. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 17.5 V Emitter-base voltage VEBO 5 V Peak pulse current IC 5 A Continuous collector current ICM 20 A IB 500 mA Ptot 2.5 W Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT1048A Electrical Characteristics Ta = 25 Min Typ Collector-base breakdown voltage Parameter V(BR)CBO IC=100ìA Symbol Testconditons 50 85 Max V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 17.5 24 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 8.7 Unit V Collector Cut-Off Current ICBO VCB=35V 0.3 10 nA Collector-emitter cut-off current ICES VCE=35V 0.3 10 nA Emitter Cut-Off Current IEBO VEB=4V 0.3 10 nA Collector-emitter saturation voltage * IC=0.5A, IB=10mA VCE(sat) IC=1A, IB=10mA IC=3A, IB=15mA IC=5A, IB=25mA 27 55 155 250 45 75 210 350 mV Base-emitter saturation voltage * VBE(sat) IC=5A, IB=25mA 920 1000 mV Base-emitter ON voltage * VBE(on) IC=5A, VCE=2V 880 970 mV IC=10mA, VCE=2V* Static Forward Current Transfer Ratio Transitional frequency hFE fT 280 440 IC=0.5A, VCE=2V* 300 450 IC=1A, VCE=2V* 300 450 IC=5A, VCE=2V* 180 300 IC=20A, VCE=2V* 50 1200 80 IC=50mA, VCE=10V f=50MHz 150 60 MHz Output capacitance Cobo VCB=10V, f=1MHz Turn-on time t(on) IC=4A, VCC=10V 120 ns Turn-off time t(off) IB1=IB2=40mA 310 ns * Pulse test: tp = 300 ìs; d 80 pF 0.02. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2