Product specification FZT790A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -6 A Peak pulse current IC -3 A Ptot 2 W Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification FZT790A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ -70 Max Unit Breakdown Voltages V(BR)CBO IC=-100ìA -50 Breakdown Voltages V(BR)CEO IC=-10mA -40 -60 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 -8.5 V Collector Cut-Off Current ICBO VCB=-30V VCB=-30V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-4V V -0.1 -10 ìA -0.1 ìA Collector-Emitter Saturation Voltage * IC=-500mA, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA -0.15 -0.25 -0.30 -0.45 -0.40 -0.75 V Base-Emitter Saturation Voltage * VBE(sat) IC=-1A, IB=-10mA -0.8 V Base-EmitterTurn-OnVoltage * VBE(on) IC=-1A, VCE=-2V Static Forward Current Transfer Ratio Transitional frequency hFE fT -1.0 -0.75 IC=-10mA, VCE=-2V 300 IC=-500mA, VCE=-2V* 250 IC=-1A, VCE=-2V* 200 IC=-2A, VCE=-2V* 150 IC=-50mA, VCE=-5V, f=50MHz 100 V 800 MHz Output capacitance Cobo VCB=-10V, f=1MHz 24 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns Turn-off time t(off) IB1=IB2=-50mA 600 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking FZT790A http://www.twtysemi.com [email protected] 4008-318-123 2 of 2