TYSEMI FZTA92

Transistors
SMD Type
Product specification
FZTA92
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
Features
+0.1
3.00-0.1
High breakdown voltage
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
3 Emitter
+0.1
0.70-0.1
2.9
4 Collector
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-100
mA
Continuous Collector Current
IC
-500
mA
Ptot
2
W
Tj:Tstg
-55 to +150
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100ìA, IE=0
-300
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0*
-300
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-100ìA, IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-200V, IE=0
-0.25
ìA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-0.1
ìA
-0.5
V
-0.9
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-20mA, IB=-2mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=-20mA, IB=-2mA
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
IC=-1mA, VCE=-10V*
25
IC=-10mA, VCE=-10V*
40
IC=-30mA, VCE=-10V*
25
IC=-10mA, VCE=-20V,f=20MHz
50
VCB=-20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
http://www.twtysemi.com
[email protected]
MHz
6
pF
2%
4008-318-123
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