IC IC MOSFET MOSFET SMDType Type SMD Product specification IRLML2502 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Ultra Low On-Resistance +0.1 1.3-0.1 +0.1 2.4-0.1 ● N-Channel MOSFET 0.4 3 1 0.55 ● Fast switching. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 0-0.1 +0.1 0.38-0.1 1.Gate 2.Emitter 2.Soruce 3.Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-Source Voltage Parameter VDS 20 V Gate-to-source voltage VGS ±12 V Continuous drain curent, @ VGS=4.5V,TA=25℃ 4.2 A 3.4 A IDM 33 A ID Continuous drain curent, @ VGS=4.5V,TA=70℃ Pulsed drain current *1 Power dissipation @ TA=25℃ Thermal Resistance,Junction- to-Ambient Junction and storage temperature range PD 1.25 W RθJA 100 ℃/W TJ,TSTG -55 to +150 ℃ *1.Reptitive rating:pulse width limited by max.junction temperature. *2.ISD≤ 0.93A,di/dt≤ 90A/μs,VDD ≤V(BR)DSS,TJ≤150℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET MOSFET SMDType Type SMD Product specification IRLML2502 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-source Breakdown voltage VDSS Gate-source leakage current IDSS Gate-source leadage IGSS Gate threshold voltage VGS(th) Static drain-source on- resistance RDS(on) Test conditons Min ID= 250 μA, VGS = 0V Typ 20 VDS = 16 V, VGS = 0V 1 VDS = 16 V, VGS = 0V, TJ=125℃ 25 VGS=±12V,VDS=0V VDS = VGS, ID= 250 μA 0.6 VDS = 15V, 745 Output capacitance Coss VGS = 0 V, 93 f= 1MHz Gate-Source Charge Qgs 5.8 67 VDS =10V ,VGS = 5 V , ID= 4 A 3.9 0.41 0.62 1.7 Qgd 1.1 td(on) 7.5 VDD= 10 V, ID= 1A, tr td(off) Fall time tf Reverse recovery time trr Reverse recovery charge Qrr 10 ns 26 TJ=25℃, IF =1.3 A, di / dt = 100 A/μs *2 Pulsed source current *1 ISM Diode forward voltage VSD TJ=25℃,VGS = 0 V, IS = 1.3 A *2 IS nC 54 RD= 10Ω,RG= 6Ω MOSFET symbo l showing the integral reverse p-n junction diode Continuous source current pF 2.6 Turn-on delay time Turn-off delay time mΩ S Gate-Drain Charge Rise time V 83 VDS = 10 V, ID = 4 A Qg 1.2 ID= 3.6A, VGS =2.5V gfs Crss nA 47 Ciss μA ±100 ID= 4.2A, VGS = 4.5V Input capacitance Reverse transfer capacitance Unit V Forward Transconductance Total Gate Charge Max 24 ns 13 nC 1.3 A 33 1.2 V *1 Repetitive rating;pulse width limited by max.junction temperature. * 2 Pulse width ≤ 300μs, Duty cycle ≤ 2% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2