Product specification KC817-25 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 ● High current gain. 1 ● Low collector-emitter saturation voltage 0.55 ● High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 ● For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Complementary types: KC807 (PNP) 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A power dissipation PD 300 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO IC = 10 μA, IE = 0 50 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 45 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10μA, IC = 0 5 V Collector cutoff current ICBO VCB = 45 V, IE = 0 100 nA Emitter cutoff current IEBO VEB =5 V , IC = 0 100 nA DC current gain * hFE VCE = 1 V,IC = 100 mA 160 VCE = 1 V,IC = 500 mA 40 400 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 V Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V Collector-base capacitance Transition frequency COb fT VCB = 10 V, f = 1 MHz 10 IC =10 m A, VCE = 5 V, f = 100 MHz 100 pF MHz * Pulsed: PW ≤ 350 μs, duty cycle ≤ 2% ■ Marking Marking 6BW 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1