SMD Type MOSFET MOSFET Product specification KDC6020C (FDC6020C) ( SOT-23-6 ) Unit: mm ■ Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A ● RDS(ON) ＜ 55mΩ (V GS =-4.5V) ● RDS(ON) ＜ 82mΩ (V GS =-2.5V) ０ｔｏ０．１ 2 1 3 Bottom Drain Contact N N-channel 4 3 5 2 1 6 Q1 (P) P-channel Bottom Drain Contact ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol N-Channel P-Channel Drain-Source Voltage VD S 20 -20 Gate-Source Voltage VGS ± 12 ±12 ID 5.9 -4.2 I DM 20 -20 Continuous Drain Current Pulsed Drain Current Power Dissipation for Dual Operation PD Power Dissipation for single Operation 1.6 1.8 Thermal Resistance.Junction- to-Ambient RthJA 68 Thermal Resistance.Junction- to-Case Rthc 1 TJ , TSTG -55 to 150 Junction and Storage Temperature Range http://www.twtysemi.com [email protected] Unit V A W ℃/W ℃ 4008-318-123 1 of 2 SMD Type MOSFET MOSFET Product specification KDC6020C (FDC6020C) ■ Electrical Characteristics Ta = 2 5℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current I GSS Gate Threshold Voltage VG S(th) Type Min ID=250μA, V GS =0V Testconditons N-CH 20 ID=-250 μA, VG S =0V P-CH -20 N-CH 1 P-CH -1 V DS=0V, V GS = ±12V N-CH ±100 V DS=0V, V GS = ±12V P-CH ±100 V DS=V GS ID=250 μA N-CH 0.6 1 1.5 V DS=V GS ID=-250μ A P-CH -0.6 -1 -1.5 23 27 31 39 V GS =2.5V, ID =4.9A 33 39 V GS =-4.5V, ID=-4.2A 45 55 P-CH 58 75 65 82 V DS=5V, ID =5.9A N-CH 23 V DS=-5V, ID=-4.2A P-CH 13 N-CH 677 V GS =-4.5V, ID=-4.2A TJ=125℃ TJ=125℃ N-CH V GS =-2.5V, ID=-3.4A Forward Transconductance gFS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crs s Gate resistance Rg Q gs Gate Source Charge Q gd Gate Drain Charge Turn-On DelayTime 753 N-CH 171 P-Channel: P-CH 163 V GS =0V, VDS =-10V, f=1MHz N-CH 91 tr Turn-Off DelayTime t d(off) Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current 2.2 P-CH 8 6 8 7 10 V GS =4.5V, V DS =10V, ID=5.9A N-CH 1.5 P-Channel: P-CH 1.6 V GS =-4.5V, V DS=-10V, ID=-4.2A N-CH 1.8 P-CH 1.9 N-CH 11 20 P-CH 13 23 V GS =4.5V, V DS =10V, ID=1A, RGEN=6Ω N-CH 16 29 P-CH 8 16 N-CH 18 32 V GS =-4.5V, V DS=-10V, ID=-1A, RGEN=6Ω P-CH 26 42 N-CH 7 14 52 P-CH 14 IF =5.9A, dI /dt=100A/ μs N-CH 15 IF =-4.2A, dI/d t=100A/μ s P-CH 17 IF =5.9A, dI /dt=100A/ μs N-CH 4 IF =-4.2A, dI/d t=100A/μ s P-CH 6 N-CH 1.3 P-CH -1.3 IS =1.3A,V GS =0V N-CH 0.7 1.2 P-CH -0.8 -1.2 4008-318-123 ns nC IS =-1.3A,VGS =0V [email protected] mΩ nC N-Channel: P-Channel: V Ω N-CH IS V SD 83 N-CH nA pF P-CH tf Turn-Off Fall Time P-CH μA S N-Channel: t d(on) Turn-On Rise Time http://www.twtysemi.com P-CH Qg Total Gate Charge Diode Forward Voltage N-Channel: V GS =0V, VDS =10V, f=1MHz V GS =15mV,f=1MHz Unit V V DS=16V, VGS=0V V GS =4.5V, ID =5.9A RDS(On) Max V DS=-16V, V GS =0V V GS =4.5V, ID =5.9A Static Drain-Source On-Resistance Typ A V 2 of 2