Transistors IC SMD Type Product specification KI1555DL SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 0.525 PIN Configuration +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 Steady State ID Maximum Power Dissipation* TA = 25 IS V 8 0.70 0.66 0.50 0.48 V 0.60 0.57 A 0.43 0.41 A 1 A 0.25 0.23 0.3 0.27 0.3 0.27 W 0.16 0.14 0.16 0.14 W PD TA = 85 Operating Junction and Storage Temperature Range Unit Steady State -8 12 IDM Continuous Source Current (Diode Conduction)a 5 secs 20 TA = 85 Pulsed Drain Current P-Channel -0.25 -0.23 A -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Symbol t Maximum Junction-to-Ambient* 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 360 415 400 460 300 350 Unit /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KI1555DL Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) Gate Body Leakage IGSS Zero Gate Voltage Drain Current IDSS ID(on) On State Drain Currenta Testconditons VDS = VGS, ID = 250 A N-Ch 0.6 VDS = VGS, ID = -250 P-Ch -0.45 A rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) tr Rise Time td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width Typ Max 100 VDS = 0 V VGS = 8V P-Ch 100 VDS = 16V, VGS = 0 V N-Ch 1 VDS = -6.4V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -6.4V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 1.0 VDS -5 V, VGS = -4.5 V P-Ch -1.0 0.320 0.385 VGS = -4.5 V, ID = -0.57A P-Ch 0.510 0.600 VGS = 2.5 V, ID = 0.40A N-Ch 0.560 0.630 VGS = -2.5 V, ID = -0.48A P-Ch 0.720 0.850 VGS = -1.8 V, ID = -0.20A P-Ch 1.00 VDS = 10 V, ID = 0.66A N-Ch 1.5 VDS = -4 V, ID = -0.57A P-Ch 1.2 IS = 0.23A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.23A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 0.8 1.2 VDS = 10 V, VGS = 4.5V, ID = 0.66A P-Ch 1.5 2.3 N-Ch 0.06 P-Channel P-Ch 0.17 VDS = -4 V, VGS = -4.5 V, ID = -0.57A N-Ch 0.30 P-Ch 0.16 N- Channel N-Ch 10 20 VDD = 10 V, RL = 20 P-Ch 6 12 ID= 0.5 A, VGEN = 4.5V, Rg = 6 N-Ch 16 30 P-Ch 25 50 P-Channel N-Ch 10 20 VDD = -4 V, RL = 8 P-Ch 10 20 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 N-Ch 10 20 P-Ch 10 20 IF = 0.23 A, di/dt = 100 A/ s s nA A A N-Ch IF = -0.23 A, di/dt = 100 A/ Unit V N-Ch VDS = 0 V VGS = 12V VGS = 4.5 V, ID = 0.66A Drain Source On State Resistance* Min 1.200 mS V pC N-Ch 20 40 P-Ch 20 40 ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2