Transistors IC SMD Type Product specification KI2312DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 RoHS Compliant 1 0.55 1.8-V Rated +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) *2 TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current *2 4.9 3.9 3.77 3.0 A IDM 15 A Avalanche Current*2 L = 0.1 mH IAS 15 A Single Avalanche Energy L = 0.1 mH EAS 11.25 mJ Continuous Source Current (diode conduction) *2 IS 1.0 A Power Dissipation *2 TA=25 -------------------------------------------------TA=70 PD Jumction Temperature and Storage Temperature Tj.Tstg 1.25 0.8 0.75 0.48 W -55 to 150 *1 Surface Mounted on 1”x 1”FR4 Board. *2 Pulse width limited by maximum junction temperature Thermal Resistance Ratings Parameter Symbol 5 sec Maximum Junction-to-Ambient * t Maximum Junction-to-Ambient * Steady State Maximum Junction-to-Foot Steady State Typical Maximum 75 100 120 166 40 50 RthJA RthJF Unit /W * Surface Mounted on 1”x 1”FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors IC SMD Type Product specification KI2312DS Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min V(BR)DSS VGS = 0 V, ID = 250 ìA Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) Typ Max 0.65 0.85 20 VDS = VGS, ID = 250 ìA 0.45 V VDS = 0 V, VGS = 8 V 100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 75 VDS 15 10V, VGS = 4.5 V 0.027 0.033 VGS = 2.5 V, ID = 4.5A 0.033 0.040 VDS =1.8V, ID = 4.0 A 0.042 0.051 Forward Transconductance * gfs VDS =15V, ID = 5.0 A 40 Diode Forward Voltage * VSD IS =1.0 A, VGS = 0 V 0.8 1.2 Total Gate Charge Qg 11.2 14 Qgs Qgd 2.2 Turn-On Delay Time td(on) 15 25 40 60 48 70 31 45 13 25 Turn-Off Delay Time td(off) Fall-Time tf Source-Drain Reverse Recovery Time trr *Pulse test: PW 300ìs duty cycle VDD =10V , RL = 10Ù , ID = 1A , VGEN =-4.5V , RG = 6Ù IF=1.0A,di/dt=100A/ìs V nC Gate-Source Charge tr A S Gate-Drain Charge Rise Time nA A VGS = 4.5 V, ID = 5.0A VDS = 10V ,VGS = 4.5 V , ID=5.0 A Unit 1.4 ns 2%. Marking Marking C2 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2