IC IC MOSFET SMD Type Product specification KI5402DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current 5 secs 30 Maximum Power Dissipation * IS TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range 4.9 4.8 3.5 2.1 1.1 2.5 1.3 1.3 0.7 W -55 to 150 TJ, Tstg Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) A 20 260 Parameter Maximum Junction-to-Ambienta V 6.7 Soldering Recommendations (Peak Temperature) t Unit 20 IDM Continuous Source Current * Steady State Steady-State RthJF Typ Max 40 50 80 95 15 20 Unit /W * Surface Mounted on 1" X 1' FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 IC IC MOSFET SMD Type Product specification KI5402DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = Min Typ Max 1.0 V 20 V 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55 5 VDS 20 5 V, VGS = 10 V Unit nA A A A VGS = 10 V, ID = 4.9 A 0.030 0.035 VGS = 4.5 V, ID = 3.9 A 0.045 0.055 Forward Transconductance* gfs VDS = 10 V, ID = 4.9 A 15 IS = 1.1 A, VGS = 0 V 0.8 1.2 V 13 20 nC Schottky Diode Forward Voltage* VSD Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 4.9 A S 1.3 nC Gate-Drain Charge Qgd 3.1 Turn-On Delay Time td(on) 10 15 ns VDD = 15 V, RL = 15 Ù 10 15 ns ID = 1 A, VGEN = 10V, RG = 6 25 40 ns 10 15 ns 30 60 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 300 s, duty cycle http://www.twtysemi.com IF = 1.1 A, di/dt = 100 A/ s nC 2%. [email protected] 4008-318-123 2 of 2