Transistors IC SMD Type Product specification KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m (VGS = 10V) RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) 0.55 ID =5.8 A (VGS=10V) +0.1 1.3-0.1 +0.1 2.4-0.1 VDS (V) = 30V 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-Source Voltage Parameter VDS 30 V Gate-Source Voltage VGS Continuous Drain Current *1 TA=25 20 5.8 ID A 4.9 TA=70 Pulsed Drain Current *2 Power Dissipation *1 V IDM TA=25 20 1.4 PD W 1 TA=70 TJ, TSTG Junction and Storage Temperature Range -55 to 150 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Symbol t 10s Maximum Junction-to-Ambient *1 Steady-State Maximum Junction-to-Lead *2 Steady-State RèJA RèJL Typ Max Unit 65 90 /W 85 125 /W 43 60 /W 2 *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KO3404 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Testconditons Min ID=250 A, VGS=0V VDS=24V, VGS=0V ,TJ=55 5 100 Gate Threshold Voltage VGS(th) VDS=VGS ID=250 A 1 On state drain current ID(ON) VGS=4.5V, VDS=5V 20 VGS=10V, ID=5.8A VGS=10V, ID=5.8A TJ=125 VGS=4.5V, ID=5.0A Forward Transconductance gFS VDS=5V, ID=5.8A Diode Forward Voltage VSD IS=1A Maximum Body-Diode Continuous Current 10 1.9 Ciss Gate resistance Coss Input Capacitance Crss Output Capacitance Rg VGS=0V, VDS=15V, f=1MHz 3 22.5 28 31.3 38 34.5 43 14.5 nA V m m S 0.76 1 2.5 A 680 820 pF 102 3 V pF 77 VGS=0V, VDS=0V, f=1MHz A A IS Reverse Transfer Capacitance Unit V 1 VDS=0V, VGS= 20V RDS(ON) Max VDS=24V, VGS=0V IGSS Static Drain-Source On-Resistance Typ 30 pF 3.6 Total Gate Charge (10V) Qg 13.88 17 nC Total Gate Charge (4.5V) Qg 6.78 8.1 nC Gate Source Charge Qgs 1.8 VGS=10V, VDS=15V, ID=5.8A nC Gate Drain Charge Qgd 3.12 Turn-On Rise Time tD(on) 4.6 6.5 ns Turn-Off DelayTime tr 3.8 5.7 ns 20.9 30 ns 5 7.5 ns Turn-Off Fall Time tD(off) VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 nC Turn-On DelayTime tf Body Diode Reverse Recovery Time trr IF=5.8A, dI/dt=100A/ s 16.1 21 ns Body Diode Reverse Recovery Charge Qrr IF=5.8A, dI/dt=100A/ s 7.4 10 nC Marking Marking A4 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2