Transistors IC IC SMD Type Product specification KPA1790 Features Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A) RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A) Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit VDSS 60 -60 V Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VGSS 20 20 V Drain Current (DC) ID(DC) 1.0 0.7 A ID(pulse) 4.0 2.8 A Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 units) *2 PT 2 W Channel Temperature Tch 150 Storage Temperature Tstg Single Avalanche Current *3 IAS 0.5 -0.35 A Single Avalanche Energy *3 EAS 0.02 0.01 mJ *1. PW 10 s, Duty Cycle -55 to +150 1% *2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm *3. Starting Tch = 25 , VDD = 30 V, RG = 25 http://www.twtysemi.com , VGS = 20 0V [email protected] 4008-318-123 1 of 2 IC Transistors IC SMD Type Product specification KPA1790 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) | yfs | tr td(off) tf QG Gate to Source Charge QGS Gate to Drain Charge QGD VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr http://www.twtysemi.com N-Ch 10 VGS = 16 V, VDS = 0 V P- Ch 10 VDS = 10 V, ID = 1 mA N-Ch 1.0 1.7 2.5 VDS = -10 V, ID = -1 mA P- Ch -1.0 -1.7 -2.5 VDS = 10 V, ID = 0.5 A N-Ch 1.0 1.7 VDS = -10 V, ID = -0.35A P- Ch 5.0 VGS = -4 V, ID = -0.35 A td(on) Body Diode Forward Voltage Note 16 V, VDS = 0 V RDS(on)2 Turn-on Delay Time Total Gate Charge VGS = VGS = -10 V, ID = -0.35 A Crss Fall Time 10 -10 RDS(on)1 Reverse Transfer Capacitance Turn-off Delay Time N-Ch VGS = 4 V, ID = 0.5 A Coss Max P- Ch VGS = 10 V, ID = 0.5 A Output Capacitance Typ VDS = 60 V, VGS = 0 V RDS(on)2 Ciss Min VDS = -60V, VGS = 0 V RDS(on)1 Input Capacitance Rise Time Testconditons Symbol N-Ch P- Ch 0.26 0.19 0.34 0.45 0.6 0.74 1.1 N-Ch 180 VDS = 10 V,VGS = 0 V,f = 1 MHz P- Ch 230 N-Ch 100 P- Channel P- Ch 100 VDS = -10 V,VGS = 0 V,f = 1 MHz N-Ch 35 P- Ch 25 N-Channel N-Ch 1 VDD = 30 V, ID =0.5 A,VGS = 10 V P- Ch 1.9 RG = 10 N-Ch 1.4 P- Ch 1.7 P- Channel N-Ch 23 VDD = -30 V, ID = -0.35 A,VGS = -10 V P- Ch 30 N-Ch 17 P- Ch 15 N-Channel N-Ch 8 ID = 1.0 A,VDD = 48 V,VGS = 10 V P- Ch 7.6 N-Ch 1 P- Channel P- Ch 1 ID = -0.7 A,VDD = -48 V,VGS = -10 V N-Ch 3.5 P- Ch 2 RG = 10 IF = 1.0 A, VGS = 0 V N-Ch 0.75 IF = 0.7 A, VGS = 0 V P- Ch 0.85 N-Channel N-Ch 30 s P- Ch 58 N-Ch 33 s P- Ch 130 IF = 1.0A, VGS = 0 V,di/dt = 100 A/ P-Channel IF = 0.7A, VGS = 0 V,di/dt = 100 A/ [email protected] 4008-318-123 A A V S 0.12 N-Channel Unit pF pF pF ns ns ns ns nC nC nC V ns nC 2 of 2