IC IC SMD Type Product specification KPA1873 TSSOP-8 Features Unit: mm 2.5 V drive available Low on-state resistance RDS(on)1 = 23 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 28 m TYP. (VGS = 3.1 V, ID = 3.0 A) RDS(on)4 = 29 m TYP. (VGS = 2.5 V, ID = 3.0 A) 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 Built-in G-S protection diode against ESD 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit 20 V Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS 12 V Drain Current (DC) Ta = 25 ID(DC) 6 A Drain Current (Pulse) *1 ID(pulse) Total Power Dissipation(2 unit) *2 PT 80 2.0 Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 *1 PW 10 s, Duty cycle A W 1% *2 Mounted on ceramic substrate of 5000mm2 X1.1 mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KPA1873 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS VDS = 20 V, VGS = 0 IGSS VGS = VDS = 10 V, ID = 1 mA Unit 10 A 10 0.5 1.0 1.5 A V VDS = 10 V, ID = 3.0A 5 VDS = 4.5V, ID = 3.0 A 13 18 23 m RDS(on)2 VGS = 4.0V, ID = 3.0 A 14 19 24 m RDS(on)3 VGS = 3.1V, ID = 3.0 A 14.5 21.5 28 m RDS(on)4 VGS = 2.5 V, ID = 3.0 A 15 24.5 29 m Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) tr td(off) VDS = 10 V, VGS = 0, f = 1 MHz ID = 3.0 A, VGS(on) = 4.0 V, VDD =10 V,RG = 10 tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode forward Voltage Max | yfs | Output Capacitance Fall Time Typ RDS(on)1 Ciss Rise Time Min 12V, VDS = 0 VGS(off) Input Capacitance Turn-off Delay Time Testconditons VF(S-D) ID = 6.0A, VDD = 16V, VGS = 4.0 V S 705 pF 205 pF 145 pF 60 ns 310 ns 380 ns 420 ns 9.0 nC 2.0 nC 4.0 nC IF = 6.0 A, VGS = 0 0.84 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 480 ns Reverse Recovery Charge Qrr di/dt = 50 A/ 1200 nC http://www.twtysemi.com s [email protected] 4008-318-123 2 of 2