IC IC SMD Type Product specification KRF7301 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 ID 5.7 Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID 5.2 Continuous Drain Current, VGS @ 4.5V,TC = 70 ID 4.1 Pulsed Drain Current*1 IDM 21 Power Dissipation Ta = 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt*2 2 Unit A W 0.016 W/ 12 V dv/dt 5 Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 Maximum Junction-to-Ambient *3 R JA 62.5 V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 2.6A, di/dt 100A/ s, VDD V(BR)DSS,TJ *3 Surface mounted on FR-4 board, t http://www.twtysemi.com 150 10sec. [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7301 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons VGS = 0V, ID = 250A V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage Max 20 V 0.044 ID = 1mA,Reference to 25 V/ VGS = 4.5V, ID = 2.6A*1 0.050 VGS = 2.7V, ID = 2.2A*1 0.070 VDS = VGS, ID = 250 A 0.70 V VDS = 15V, ID = 2.6A*1 8.3 S Gate-to-Source Reverse Leakage VDS = 16V, VGS = 0V 1.0 VDS = 16V, VGS = 0V, TJ = 125 25 VGS = 12V 100 VGS = -12V -100 Qg ID = 2.6A Gate-to-Source Charge Qgs VDS = 16V 2.2 Qgd VGS = 4.5V,*1 8.0 Turn-On Delay Time td(on) VDD = 10V nA nC 9.0 tr ID = 2.6A 42 td(off) RG = 6.0 32 Fall Time tf RD = 3.8 Intermal Drain Inductance LD 4.0 Internal Source Inductance LS 6.0 Input Capacitance Ciss VGS = 0V 660 Output Capacitance Coss VDS = 15V 280 Reverse Transfer Capacitance Crss f = 1.0MHz 140 Turn-Off Delay Time A 20 Gate-to-Drain ("Miller") Charge Rise Time Unit gfs IGSS Total Gate Charge Typ VGS(th) IDSS Drain-to-Source Leakage Current TJ Min ns 51 *1 nH Continuous Source Current Body Diode) pF IS 2.5 ISM 21 A Pulsed Source Current Body Diode) *2 1.0 V 29 44 ns 22 33 Diode Forward Voltage VSD Reverse Recovery Time trr TJ = 25 , IF =2.6A Reverse RecoveryCharge Qrr di/dt = 100A/ Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *1 Pulse width 300 s; duty cycle TJ = 25 , IS = 1.8A, VGS = 0V*1 s*1 C 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 2