IC IC SMD Type Product specification KRF7313 Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 30 Gate-to-Source Voltage VGS Continuous Drain Current,TC = 70 ID 6.5 *3 ID 30 IDM 2.5 Pulsed Drain Current Maximum Power Dissipation Ta = 25 *3 Maximum Power Dissipation Ta = 70 PD V 20 *3 Continuous Drain Current, Ta = 25 Unit 2 A W 1.3 *3 Single Pulse Avalanche Energy *4 EAS 82 mJ Avalanche Current IAR 4 A Repetitive Avalanche Energy EAR 0.2 mJ Peak Diode Recovery dv/dt*2 dv/dt 5.8 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 Maximum Junction-to-Ambient *3 R JA 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 150 *3 Surface mounted on FR-4 board, t *4 Starting TJ=25 10sec. ,L=10mH,RG=25 , IAS=4.0A http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KRF7313 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons VGS = 0V, ID = 250A V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance Gate-to-Source Forward Leakage 30 0.023 0.029 VGS = 4.5V, ID = 4.7A*1 0.032 0.046 VDS = 15V, ID = 5.8A*1 V/ 1.0 V 14 S VDS = 24V, VGS = 0V 1.0 VDS = 24V, VGS = 0V, TJ = 55 25 VGS = 20V 100 VGS = -20V -100 Total Gate Charge Qg ID = 5.8A 22 33 Gate-to-Source Charge Qgs VDS = 15V 2.6 3.9 Gate-to-Drain ("Miller") Charge Qgd VGS = 10V,*1 6.4 9.6 Turn-On Delay Time td(on) VDD = 15V 8.1 Rise Time Turn-Off Delay Time Fall Time tr ID = 1.0A 8.9 13 RG = 6.0 26 39 tf RD = 15 17 26 Input Capacitance Ciss VGS = 0V 650 Output Capacitance Coss VDS = 25V 320 Reverse Transfer Capacitance Crss f = 1.0MHz 130 Continuous Source Current Body Diode) A nA nC 12 td(off) *1 Unit V VGS = 10V, ID = 5.8A*1 VDS = VGS, ID = 250 A Gate-to-Source Reverse Leakage Max 0.022 gfs IGSS Typ ID = 1mA,Reference to 25 VGS(th) IDSS Drain-to-Source Leakage Current TJ Min ns pF IS 2.5 ISM 30 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD 0.78 1.0 V Reverse Recovery Time trr TJ = 25 , IF =1.7A 45 68 ns Reverse RecoveryCharge Qrr di/dt = 100A/ 58 87 *1 Pulse width 300 s; duty cycle TJ = 25 , IS = 1.7A, VGS = 0V*1 s*1 C 2%. *2 Repetitive rating; pulse width limited bymax http://www.twtysemi.com [email protected] 4008-318-123 2 of 2