Product specification KRF7325 Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage Rating Unit V VDS -12 Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID -7.8 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID -6.2 Pulsed Drain Current *1 A IDM -39 Power Dissipation *2 @Ta= 25 PD 2.0 W Power Dissipation *2 @Ta = 70 PD 1.3 W 16 W/ Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG 8.0 V -55 to + 150 Junction-to-Drain Lead R JL 20 /W Maximum Junction-to-Ambient *2 R JA 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 When mounted on 1 inch square copper board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification KRF7325 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ RDS(on) Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS = 0V, ID = -250 A Min V/ 24 VGS = -2.5V, ID = -6.2A*1 33 VGS = -1.8V, ID = -3.9A*1 49 gfs VDS = -10V, ID = -7.8A*1 17 -0.90 -1.0 VDS = -9.6V, VGS = 0V, TJ = 70 -25 VGS = -8.0V -100 VGS = 8.0V 100 ID = -7.8A Gate-to-Source Charge Qgs VDS = -6.0V 5.0 7.5 Gate-to-Drain ("Miller") Charge Qgd VGS = -4.5V 4.7 7.0 Turn-On Delay Time td(on) VDD = -6.0V,VGS=-4.5V 9.4 Rise Time tr Turn-Off Delay Time td(off) Fall Time 22 ID = -1.0A 9.8 RG = 6 240 tf Ciss VGS = 0V 2020 Output Capacitance Coss VDS = -10V 520 Reverse Transfer Capacitance Crss f = 1.0MHz 330 Body Diode) V A nA 33 nC ns 180 Input Capacitance Continuous Source Current m S VDS = -9.6V, VGS = 0V Qg Total Gate Charge Unit V VGS = -4.5V, ID = -7.8A*1 -0.40 IGSS Max 0.007 TJ ID = -1mA,Reference to 25 VDS = VGS, ID = -250 A Gate-to-Source Reverse Leakage Typ -12 VGS(th) IDSS Gate-to-Source Forward Leakage Testconditons pF IS -2.0 ISM -39 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr *1 Pulse width 400 s; duty cycle -1.2 V TJ = 25 , IF =-2.0A 36 54 ns di/dt = -100A/ 28 42 nC TJ = 25 , IS = -2.0A, VGS = 0V*1 s*1 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2