TYSEMI KST9014

Diodes
IC
Transistors
Transistor
T
SMD Type
Product specification
KST9014
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Collector Current :IC=0.1A
1
0.55
Excellent hFE linearity
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.1
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-base breakdown voltage
VCBO
Ic=100uA, IE=0
50
Typ
Max
Unit
V
Collector-emitter breakdown voltage
VCEO
Ic=1mA, IB=0
45
V
Emitter-base Breakdown voltage
VEBO
IE=100
5
V
Collector cutoff current
ICBO
VCB=50V, IE=0
Emitter cutoff current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=5V, IC=1mA
A, IC=0
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
Transition frequency
fT
VCE=5V, IC=10mA,f=30MHZ
200
0.1
A
0.1
A
1000
0.5
1
150
V
V
MHz
hFE Classification
J6
Marking
Rank
L
H
hFE
200 to 450
450 to 1000
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Diodes
IC
Transistors
Transistor
T
SMD Type
Product specification
KST9014
Typical Characteristics
Fig.1 Static Characteristic
Fig.3 Base-Emitter Saturation Voltage
Fig.2 DC Current Gain
Fig. 4 Current Gain Bandwidth Product
Collector- Emitter Saturation Voltage
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2