Transistors IC SMD Type Product specification KST9018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● power dissipation.(PC=200mW) 1 0.55 ● High current gain bandwidth product. +0.1 1.3-0.1 +0.1 2.4-0.1 ■ Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current to Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector to base breakdown voltage Testconditons V(BR)CBO IC= 100μA, IE=0 Collector to emitter breakdown voltage IC= 1mA, IB=0 V(BR)CEO Emitter to base breakdown voltage V(BR)EBO IE=100μA, IC=0 Min Typ Max Unit 30 V 15 V 5 V Collector cut to off current ICBO VCB=12V, IE=0 0.05 μA Emitter cut to off current IEBO VEB= 3V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 70 190 Collector to emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base to emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA,f=400MHz 600 MHz ■ Marking Marking http://www.twtysemi.com J8 [email protected] 4008-318-123 1 of 1