Diodes IC Transistors Transistor T SMD Type Product specification KTA1273 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector current: IC=-2A ● Complementary to KTC3205 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector to base voltage Parameter VCBO -30 V Collector to emitter voltage VCEO -30 V Emitter to base voltage VEBO -5 V Collector current (DC) IC -2 A Collector Power Dissipation PC 500 mW Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cutoff current ICBO VCB = -30 V, IE = 0 A -0.1 μA Emitter cutoff current IEBO VEB = -5V, IC = 0 A -0.1 μA DC current gain * hFE VCE = -2V, IC = -500mA Collector saturation voltage 100 320 VCE(sat) IC = -1.5A, IB = -30 mA Base to emitter voltage -2 V -1 V VBE VCE = -2 V, IC = -500mA Transition frequency fT VCE = -2V, IE = 500 mA 120 MHz Output capacitance Cob VCE = -10 V, IE = 0, f = 1.0 MHz 48 pF * Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% ■ hFE Classification Rank O Y Range 100～200 160～320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1