Diodes IC Transistors Transistor T SMD Type Product specification KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ■ Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374. 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -0.4 A Collector power dissipation PC 500 mW Jumction temperature Tj 150 ℃ Storage temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -80 Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -80 Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 Typ Max Unit V Collector cut-off current ICBO VCB = -80 V, IE = 0 -0.1 µA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 µA DC current gain hFE Collector-emitter saturation voltage VCE (sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE = -2 V, IC = -50mA 70 VCE = -2 V, IC = -200m A 40 240 IC = -200mA, IB = -20mA -0.4 V VCE=-2V,IC=-5mA -1.2 V VCE=-10V,IC=-10mA 120 VCB=-10V,IE=0,f=1MHz 14 MHz ■ hFE Classification Marking FO FY Rank O Y Range 70～140 120～240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1