Transistors Diodes IC Transistor T SMD Type Product specification KTC4375 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=1.5A 0.44±0.1 0.40±0.1 0.53±0.1 0.80±0.1 0.48±0.1 3 2.60±0.1 2 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V IC 1.5 A PC 500 mW Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range PC * 1 W Tj 150 ℃ Tstg -55 to 150 ℃ 2 * : KTC4375 mounted on ceramic substrate (250mm x0.8t) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5 V Collector Cut-off Current ICBO VCB=30V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 100 nA DC Current Gain hFE VCE=2V, IC=500mA Collector-Emitter Saturation Voltage VCE(sat) 100 320 IC=1.5A, IB=0.03A 2.0 V Base-Emitter Voltage VBE VCE=2V, IC=500mA 1.0 V Transition frequency fT VCE=2V, IC=500mA Collector Output Capacitance Cob 120 VCB=10V, IE=0, f=1MHz MHz 40 pF ■ hFE Classification Marking GO GY Rank O Y hFE 100～200 160～320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1