Product specification KTD1898 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=1A 0.80±0.1 0.53±0.1 0.44±0.1 2.60±0.1 0.48±0.1 3 2 0.40±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-Emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector Current IC 1 A Collector Power Dissipation PC 500 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test conditons IC=1mA, IB=0 Min Typ Max 80 Unit V Collector Cut-off Current ICBO VCB=80V, IE=0 1 μA Emitter Cut-off Current IEBO VEB=4V, IC=0 1 μA DC Current Gain hFE VCE=3V, IC=500mA VCE(sat) IC=500mA, IB=20mA fT VCE=10V, IC=10mA 100 MHz VCB=10V, IE=0, f=1MHz 20 pF Collector-Emitter Saturation Voltage Transition frequency Collector Output Capacitance Cob 70 400 0.4 V ■ hFE Classification Marking ZO ZR ZGR Rank O R GR hFE 70～140 120～240 200～400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1