TYSEMI KTHD3100C

Transistors
IC
IC
SMD Type
Product specification
KTHD3100C
Features
Complementary N-Channel and P-Channel MOSFET
Leadless SMD Package Provides Great Thermal Characteristics
Trench P-Channel for Low On Resistance
Low Gate Charge N-Channel for Test Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current Continuous *1 TA = 25
ID
TA = 85
t
10S
IDM
Drain current Pulsed t = 10 s *1
Total power dissipation
t
12
Steady State
t
8.0
-3.2
2.1
-2.3
3.9
-4.4
12
-13
A
A
W
3.1
W
-55 to 150
IS
2.5
TL
260
R
V
1.1
TJ, Tstg
Source Current (Body Diode)
Unit
V
2.9
5S
Lead Temperature for Soldering Purposes
P-Channel
20
PD
Operating and Storage Temperature Range
Junction-to-Ambient *1
N-Channel
A
113
JA
10S
60
/W
*1 Surface Mounted on FR4 board using 1 in sq pad size
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IC
Transistors
IC
SMD Type
Product specification
KTHD3100C
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Testconditons
Symbol
V(BR) DSS
ID=250 A,VGS=0V
N-Ch
20
ID=-250 A,VGS=0V
P-Ch
-20
VDS=16V,VGS=0V
Zero gate voltage drain current
IDSS
VDS=16V,VGS=0V,TJ = 25
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V,TJ = 125
Gate?to?Source Leakage Current
IGSS
Gate threshold voltage *1
VGS (th)
Static drain-source on-state
resistance *1
RDS (on)
Static drain-source on-state
resistance *1
RDS (on)
Forward Transconductance
gFS
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate?to?Source Gate Charge
Gate?to?Drain "Miller" Charge
Turn-on delay time
Rise time
Turn-off delay time *1
Fall time *1
Forward Voltage *1
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QGS
QGD
td (on)
tr
td (off)
tf
VSD
Min
Typ
Max
V
1
N-Ch
5.0
-5
12 V
N-Ch
100
VDS = 0 V, VGS =
8V
P-Ch
100
VDS = VGS, ID = 250 A
N-Ch
0.6
1.2
VDS = VGS, ID = -250 A
P-Ch
-0.45
-1.5
N-Ch
ID=2.3A,VGS=2.5V
ID=-3.2A,VGS=-4.5V
P-Ch
ID=-2.2A,VGS=-2.5V
58
80
77
115
64
80
85
110
ID=2.9A,VDS=10V
N-Ch
6.0
ID=-3.2A,VDS=-10V
P-Ch
8.0
N-Channel
N-Ch
165
VDS=10V,VGS=0V,f=1MHz
P-Ch
680
N-Ch
80
P-Channel
P-Ch
100
VDS=-10V,VGS=0V,f=1MHz
N-Ch
25
P-Ch
70
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
2.3
VGS =-4.5 V, VDS = -10 V, ID =-3.2 A
P-Ch
7.4
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
0.2
VGS =-4.5 V, VDS = -10 V, ID =-3.2 A
P-Ch
0.6
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
0.4
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
P-Ch
1.4
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
N-Ch
0.7
2.5
nC
6.3
ID=-3.2A,VDD=-10V
P-Ch
5.8
N-Channel
N-Ch
10.7
VGS=4.5V,RG=2.5 *2
P-Ch
11.7
N-Ch
9.6
P-Ch
16
N-Ch
1.5
P-Ch
12.4
IS=2.5 A,VGS=0V
N-Ch
0.8
1.15
IS=-2.5 A,VGS=0 V
P-Ch
-0.8
-1.2
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m
pF
P-Ch
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m
pF
N-Ch
*2
V
pF
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
VGS=-4.5V,,RG=2.5
nA
S
ID=2.9A,VDD=10V
P-Channel
A
-1
P-Ch
VDS = 0 V, VGS =
ID=2.9A,VGS=4.5A
Unit
ns
ns
ns
ns
V
2 of 3
IC
Transistors
IC
SMD Type
Product specification
KTHD3100C
Electrical Characteristics Ta = 25
Parameter
Testconditons
Symbol
trr
N-Channel
Reverse Recovery Time
ta
tb
VGS = 0 V,dIS/dt = 100 A/
P-Channel
VGS = 0 V,dIS/dt = 100 A/
Reverse Recovery Storage Charge
*1 Pulse Test: Pulse Width
250
s,IS=1.5 A
s,IS=?1.5A
QRR
s, Duty Cycle
Min
Typ
N-Ch
12.5
P-Ch
13.5
N-Ch
9
P-Ch
9.5
N-Ch
3.5
P-Ch
4
N-Ch
6
P-Ch
6.5
Max
Unit
ns
nC
2%.
*2 Switching characteristics are independent of operating junction temperature.
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[email protected]
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3 of 3