Transistors IC IC IC IC IC SMD SMD SMDType Type Type Product specification KTS3C3F30L Features Typical RDS(on) (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Standard outline for easy automated surface mount assembly Low threshold drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k ) Gate-to-Source Voltage N-Channel P-Channel VDS 30 VDGR 30 V 16 VGS V Continuous Drain Current, at Tc = 25 ID 3.5 2.7 Continuous Drain Current, at Tc = 100 ID 2.2 1.7 Pulsed Drain Current IDM 14 Total Dissipation at TC = 25 Single Operation Total Dissipation at TC = 25 Dual Operation Junction and Storage Temperature Range PTOT TJ, TSTG Thermal Resistance Junction-ambient Max (Single Operating) Rthj-amb * (Dual Operating) Maximum Lead Temperature For Soldering Purpose Tl Unit A 11 1.6 2 W -65 to 150 62.5 78 /W 300 2 * Mounted on 0.5 in pad of 2oz. copper. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Transistors IC IC IC IC IC SMD SMD SMDType Type Type Product specification KTS3C3F30L Electrical Characteristics Ta = 25 Parameter Drain-source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-off Delay Time Fall Time Source-drain Current Source-drain Current (pulsed) *1 http://www.twtysemi.com Testconditons Symbol Qgd td(off) tf Min Typ Max Unit ID = 250 A, VGS = 0 N-Ch 30 V ID = 250 A, VGS = 0 P-Ch 30 V N-Ch 1 A VDS = Max Rating P-Ch 1 A VDS = Max Rating, TC = 125 N-Ch 10 A P-Ch 10 A VGS = 16V N-Ch 10 P-Ch 10 A A VDS = VGS, ID = 250 A N-Ch 1 V VDS = VGS, ID = 250 A P-Ch 1 V VGS = 10V, ID = 1.75A N-Ch 50 65 m VGS = 10V, ID = 1.5A P-Ch 140 165 m VGS = 4.5V, ID = 1.75A N-Ch 60 90 m VGS = 4.5V, ID = 1.5A P-Ch 160 200 m VDS = 15 V ID= 1.75 A N-Ch 5.5 VDS = 15 V ID= 1.5 A P-Ch 4 S N-Ch 320 pF N-Channel P-Ch 420 pF VDS = 25V, f = 1 MHz, VGS = 0 N-Ch 90 pF P-Channel P-Ch 95 pF VDS = 25V, f = 1 MHz, VGS = 0 N-Ch 40 pF P-Ch 30 pF N-Channel N-Ch 27 ns P-Ch 14.5 ns N-Ch 40 ns P-Ch 37 ns VDD=15V,ID=1.75A,RG=4.7 , VGS = 4.5V P-Channel VDD=15V,ID=1.5A,RG=4.7 , VGS=4.5V N-Channel S N-Ch 8.5 12 nC P-Ch 4.8 7 nC N-Ch 2 P-Channel P-Ch 1.7 nC VDD = 24V, ID= 3A,VGS = 4.5V N-Ch 4 nC P-Ch 2 nC N-Channel N-Ch 30 ns VDD = 15V, ID = 1.75A,RG = 4.7 , VGS = 4.5V P-Ch 90 ns P-Channel N-Ch 20 ns VDD = 15V, ID = 1.5A,RG = 4.7 , VGS = 4.5V P-Ch 23 ns VDD =24V, ID=3.5A,VGS = 4.5V ISD ISDM [email protected] nC N-Ch 3.5 A P-Ch 3 A N-Ch 14 A P-Ch 12 A 4008-318-123 2 of 3 Transistors IC IC IC IC SMD SMD Type Type Product specification KTS3C3F30L Electrical Characteristics Ta = 25 Parameter Forward On Voltage *2 VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Curren *1 Pulsed: Pulse duration = 300 Testconditons Symbol IRRM Min Typ Max Unit ISD = 3.5A, VGS = 0 N-Ch 1.2 V ISD = 3A, VGS = 0 P-Ch 1.2 V N-Channel N-Ch 28 P-Ch 35 ns N-Ch 18 nC ISD = 3.5A, di/dt = 100A/ s, VDD = 15V, Tj = 150 ns P-Channel P-Ch 25 nC ISD = 3A, di/dt = 100A/ N-Ch 1.3 A P-Ch 1.5 A VDD = 15V, Tj = 150 s, s, duty cycle 1.5 %. *2 Pulse width limited by safe operating area http://www.twtysemi.com [email protected] 4008-318-123 3 of 3