TYSEMI KUK110-50GL

Transistors
IC
SMD Type
Product specification
KUK110-50GL
TO-263
Unit: mm
1 .2 7 -0+ 0.1.1
Features
Vertical power DMOS output stage
Low on-state resistance
+0.1
1.27-0.1
+0.2
4.57-0.2
5 .2 8 -0+ 0.2.2
5 V input level
Low threshold voltage also allows 5 V control
Control of power MOSFET
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
and supply of overload protection circuits derived from input
0.1max
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
Latched overload protection reset by input
1 5 .2 5 -0+ 0.2.2
8 .7 -0+ 0.2.2
Overload protection against short circuit load
5 .6 0
Overload protection against over temperature
+0.1
5.08-0.1
+0.2
0.4-0.2
Input
11Gate
Drain
22Drain
Source
33Source
ESD protection on input pin
Overvoltage clamping for turn off of inductive loads
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDSS
50
V
VIS
6
V
Continuous drain current *
ID
45
A
Continuous drain current Tmb
ID
28
A
IDRM
180
A
W
Continuous off-state drain source voltage1 VIS = 0 V
Continuous input voltage
100 ; VIS = 5 V
Repetitive peak on-state drain current *
PD
125
Tstg
-55 to 150
Tj
150
Lead temperature
Tsold
250
Protection supply voltage3 for valid protection
VISP
4
V
Protected drain source supply voltage VIS = 5 V
VDDP(T)
50
V
Protected drain source supply voltage4 VIS = 5 V
VDDP(P)
24
V
Instantaneous overload dissipation Tmb = 25 °C
PDSM
2.1
kW
Total power dissipation Tmb
25
Storage temperature
Continuous junction temperature2
* Tmb
25 ; VIS = 5 V
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4008-318-123
1 of 3
Transistors
IC
SMD Type
Product specification
KUK110-50GL
Electrical Characteristics Ta = 25
Parameter
Repetitive peak clamping current
Symbol
Testconditons
IDROM
VIS = 0 V
Non-repetitive clamping energy
EDSM
Tmb
Repetitive clamping energy
EDRM
Electrostatic discharge capacitor voltage
VC
Tmb
25 ; IDM = 25 A;V
Min
Typ
V(CL)DSS VIS = 0 V; ID = 10 mA
V(CL)DSS VIS = 0 V; IDM = 4 A; tp
45
A
1
J
20 V; f = 250 Hz
80
mJ
2
kV
70
V
85 ; IDM = 16 A;VDD
Drain-source clamping voltage
Unit
25 V; inductive load
Human body model;C = 250 pF; R = 1.5 kÙ
Drain-source clamping voltage
Max
50
300ì s;ä
V
0.01
Zero input voltage drain current
IDSS
VDS = 12 V; VIS = 0 V
0.5
10
ìA
Zero input voltage drain current
IDSS
VDS = 50 V; VIS = 0 V
1
20
ìA
IDSS
VDS = 40 V; VIS = 0 V; Tj = 125
10
100
ìA
30
35
mÙ
Zero input voltage drain current
Drain-source on-state resistance
RDS(ON) IDM = 25 A; VIS = 5 V;tp
Overload threshold energy
EDS(TO)
Tmb = 25 ; L
10 mH;VDD = 13 V; VIS = 5 V
td sc
Tmb = 25 ; L
10 mH;VDD = 13 V; VIS = 5 V
Response time
Threshold junction temperature
Tj(TO)
VIS = 5 V; from ID
Input threshold voltage
VIS(TO)
VDS = 5 V; ID = 1 mA
Input supply current
IIS
300 ìs; ä
0.01
2A
2.0
V
0.2
0.35
mA
2.0
2.6
3.5
V
3.8
10
mA
Protection reset voltage
VISR
Tj = 150
Input supply current
IISL
VIS = 5 V; protection latched
2
Input clamp voltage
V(BR)IS
II = 10 mA
6
Forward transconductance
gfs
VDS = 10 V; IDM = 25 A tp
ms
1.5
VIS = 5 V; normal operation
to gate of power MOSFET
0.8
1.0
VISR
RIG
J
150
Protection reset voltage
Input series resistance
1.1
1.0
1.5
kÙ
28
S
Drain current1
ID(SC)
VDS = 13 V; VIS = 5 V
60
A
Turn-on delay time
td on
VDD = 13 V; VIS = 5 V
2
resistive load RL = 1.1Ù
8
VDD = 13 V; VIS = 0 V
8
resistive load RL = 1.1 Ù
8
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
tr
td off
tf
td on
tr
td off
3.7
inductive load IDM = 11 A
3.7
VDD = 13 V; VIS = 0 V
13
1.4
tf
inductive load IDM = 11 A
Continuous forward current
IS
Tmb
VSDS
0.01
VDD = 13 V; VIS = 5 V
Fall time
Forward voltage
300 ìs;ä
17
V
25 ; VIS = 0 V
IS = 50 A; VIS = 0 V; tp = 300 ìs
1.0
ìs
50
A
1.5
V
Reverse recovery time
trr
not applicable
Internal drain inductance
Ld
Measured from upper edge of tab to centre of die
2.5
nH
Internal source inductance
Ls
Measured from source lead soldering point to
source bond pad
7.5
nH
Junction to mounting base
Rth j-mb
Junction to ambient
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Rth j-a
0.8
minimum footprint FR4 PCB
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50
4008-318-123
1.0
K/W
K/W
2of 3
Transistors
IC
SMD Type
Product specification
KUK110-50GL
Electrical Characteristics Ta = 25
Parameter
Continuous forward current
Forward voltage
Symbol
IS
VSDO
Testconditons
Tmb
Min
Typ
25 ; VIS = 0 V
IS = 26 A; VIS = 0 V; tp = 300 ìs
1.0
Max
Unit
26
A
1.5
V
Reverse recovery time
trr
not applicable
Internal drain inductance
Ld
Measured from upper edge of tab to centre of
die
2.5
nH
Internal source inductance
Ls
Measured from source lead soldering point to
source bond pad
7.5
nH
*1 Continuous input voltage. The specified pulse width is for the drain current.
*2 Continuous drain-source supply voltage. Pulsed input voltage.
*3 Continuous input voltage. Momentary short circuit load connection.
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[email protected]
4008-318-123
3of 3