Transistors SMD Type Product specification MJD47;MJD50 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Straight Lead 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Load Formed for Surface Mount Application +0.15 0.50 -0.15 +0.2 9.70 -0.2 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Emitter Voltage Collector-Emitter Voltage Symbol Rating Unit 350 V MJD50 500 V MJD47 250 V 400 V MJD47 VCBO VCEO MJD50 Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 1 A Collector Current (Pulse) ICP 2 A Base Current IB 0.6 A 15 W 1.56 W Collector Dissipation (TC=25 ) PC Collector Dissipation (Ta=25 ) Junction Temperature TJ 150 Storage Temperature TSTG -65 to 150 Electrical Characteristics Ta = 25 unless otherwise noted Parameter Symbol Collector-Emitter Sustaining Voltage * MJD47 VCEO(sus) Testconditons IC = 30mA, IB = 0 MJD50 Collector Cut-off Current MJD47 Collector Cut-off Current MJD47 ICEO MJD50 ICES MJD50 Emitter Cut-off Current IEBO DC Current Gain * hFE Max Unit V 400 V 0.2 mA VCE = 300V, IB = 0 0.2 mA VCE = 350, VEB = 0 0.1 mA VCE = 500, VEB = 0 0.1 mA 1 mA VBE = 5V, IC = 0 VCE = 10V, IC = 0.3A 30 VCE = 10V, IC = 1A 10 VCE(sat) IC = 1A, IB = 0.2A Base-Emitter Saturation Voltage * VBE(sat) VCE = 10A, IC = 1A fT VCE =10V, IC = 0.2A *Pulse Test: PW Typ VCE = 150V, IB = 0 Collector-Emitter Saturation Voltage * Current Gain Bandwidth Product Min 250 10 150 1 V 1.5 V MHz 300ìs, Duty Cycle 2% http://www.twtysemi.com [email protected] 4008-318-123 1 of 1