Product specification MMBD101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure-6.0dB [email protected] 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very Low Capacitance-Less Than 1.0pF@zero Volts +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High Forward Conductance-0.5volts(typ)@IF=10mA 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue U nit VR 7.0 V pF 280 mW 2.2 mW/ Tj 150 T stg -55 to +150 R everse voltage F orward P ower D issipation @ T A = 25 D erate above 25 Junction tem perature S torage tem perature range Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage Symbol V (BR)R Conditions Min IR = 10 7.0 A Typ Max Unit 10 V Diode Capacitance CT V R = 0,f =1.0MHz,Note1 0.88 1.0 pF Forward Voltage VF IF = 10 mA 0.5 0.6 V Reverse Leakage IR V R = 3.0 V 0.02 0.25 A Marking Marking 4M http://www.twtysemi.com [email protected] 4008-318-123 1 of 1