TYSEMI MMBD4448HTW

Product specification
MMBD4448HTW
SOT-363
Unit: mm
+0.15
2.3-0.15
Features
+0.1
1.25-0.1
0.525
+0.1
1.3-0.1
0.65
0.36
Fast Switching Speed
Ultra-Small Surface Mount Package
+0.05
0.95-0.05
High Conductance
+0.05
0.1-0.02
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
For General Purpose Switching Applications
PIN Array
Absolute Maximum Ratings Ta = 25
Parameter
Non-Repetitive Peak Reverse Voltage
Symbol
Rating
Unit
VRM
100
V
80
V
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Non-Repetitive Peak Forward Surge Current
t = 1.0 s
IFSM
Power Dissipation
PD
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
http://www.twtysemi.com
4.0
A
2.0
t = 1.0s
R
JA
Tj,TSTG
[email protected]
200
mW
625
/W
-65 to +150
4008-318-123
1 of 2
Product specification
MMBD4448HTW
Electrical Characteristics Ta = 25
Parameter
Symbol
Reverse Breakdown Voltage (*)
V(BR)R
Forward Voltage (*)
VF
Reverse Current (*)
IR
Testconditons
Min
IR = 100 A
80
IF = 5.0mA
0.62
Typ
Max
Unit
V
0.72
IF = 10mA
0.855
IF = 100mA
1.0
IF = 150mA
1.25
VR = 70V
100
nA
VR = 75V, Tj = 150
50
A
VR = 25V, Tj = 150
30
A
VR = 20V
25
nA
V
Total Capacitance
CT
VR = 6V, f = 1.0MHz
3.5
pF
Reverse Recovery Time
trr
VR = 6V, IF = 5mA
4.0
ns
* Short duration test pulse used to minimize self-heating effect.
Marking
Marking
KAA
http://www.twtysemi.com
[email protected]
4008-318-123
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