SMD Type Product specification MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • Pb−Free Packages are Available 500 mA, 60 V RDS(on) = 5 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) Drain Current − Continuous − Pulsed N−Channel 3 VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 0.8 Adc Symbol Max Unit 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 PD 225 1.8 mW mW/°C RJA 556 °C/W TJ, Tstg −55 to +150 °C 3 SOT−23 CASE 318 STYLE 21 1 2 1. FR−5 = 1.0 0.75 0.062 in. MARKING DIAGRAM 6Z W 6Z W = Device Code = Work Week PIN ASSIGNMENT 3 Drain Gate 1 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification MMBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc IGSS − 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) − 5.0 ID(off) − 0.5 A Ciss − 60 pF td(on) − 10 ns td(off) − 10 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 A) Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) On−State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 ) Figure 1 Turn−Off Delay Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping† MMBF170LT1 SOT−23 (TO−236) 10,000 Tape & Reel MMBF170LT1G SOT−23 (TO−236) (Pb−Free) 3,000 Tape & Reel MMBF170LT3 SOT−23 (TO−236) 10,000 Tape & Reel MMBF170LT3G SOT−23 (TO−236) (Pb−Free) 3,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 PULSE GENERATOR 50 Vin 20 dB 50 ATTENUATOR 40 pF TO SAMPLING SCOPE 50 INPUT Vout OUTPUT INVERTED Vout tr td(off) 90% 10% INPUT 50% 50 Vin 1 M 90% toff tf 90% 50% 10% PULSE WIDTH (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit http://www.twtysemi.com [email protected] Figure 2. Switching Waveform 4008-318-123 2of 2