TYSEMI MMBT3904

Product specification
KMBT3904(MMBT3904)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Epitaxial planar die construction
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
60
V
Collector - Emitter Voltage
VCEO
40
V
Emitter - Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
0.2
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collecto- base breakdown voltage
VCBO
Ic= 100 ìA
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA
Emitter - base breakdown voltage
VEBO
IE= 10 A
Collector cut-off current
IcBO
VCB= 60 V , IE=0
Collector cut-off current
IcEO
Emitter cut-off current
IEBO
DC current gain
hFE
IE=0
IB=0
IC=0
Min
Typ
Max
60
Unit
V
40
V
6
V
0.1
A
VCE= 30 V , VBE(off)=3V
50
nA
VEB= 5V , IC=0
0.1
A
VCE= 1V, IC= 10mA
100
VCE= 1V, IC= 50mA
60
400
Collector-emitter saturation voltage
VCE(sat) IC=50 mA, IB= 5mA
0.3
V
Base - emitter saturation voltage
VBE(sat) IC= 50 mA, IB= 5mA
0.95
V
Delay time
td
VCC=3.0V,VBE=-0.5V
35
Rise time
tr
IC=10mA,IB1=-IB2=1.0mA
35
Storage time
ts
VCC=3.0V,IC=10mA
200
Fall time
tf
IB1=-IB2=1.0mA
50
Transition frequency
fT
VCE= 20V, IC= 10mA,f=100MHz
250
ns
ns
MHz
Marking
Marking
1AM
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
KMBT3904(MMBT3904)
Typical Characteristics
Fig.1 Max Power Dissipation vs
Ambient Temperature
Fig.3 Typical DC Current Gain vs
Collector Current
Fig.2 Input and Output Capacitance vs.
Collector-Base Voltage
Fig.4 Typical Collector-Emitter Saturation Voltage vs.
Collector Current
Fig.5 Typical Base-Emitter Saturation Voltage vs.
Collector Current
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2