Product specification MMBT3906T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 ● Ultra-Small Surface Mount Package +0.05 0.8-0.05 2 0.55 ■ Features +0.01 0.1-0.01 ● Complementary NPN Type Available(MMBT3904T) 0.35 3 +0.25 0.3-0.05 +0.1 -0.1 0.5 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V Collector Current- Continuous IC -0.2 A Power Dissipation PD 150 mW RθJA 833 ℃/W TJ, Tstg -55 to 150 ℃ Thermal Resistance, Junction to Ambient (Note 1) Junction and Storage Temperature Notes: 1. Device mounted on FR-4 PCB. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector - base breakdown voltage V(BR)CBO Ic= -10 μA， IE=0 -40 V Collector - emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -40 V Emitter- base breakdown voltage V(BR)EBO IE= -10 μA， IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 0.1 μA DC current gain hFE VCE= -1V, IC= -10mA 100 VCE= -1V, IC= -50mA 60 300 Collector- emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.4 V Base - emitter saturation voltage VBE(sat) IC=-50 mA, IB= -5mA -0.95 V Delay time td VCC=-3.0V,VBE=0.5V 35 Rise time tr IC=-10mA,IB1=-1.0mA 35 Storage time ts VCC=-3.0V,IC=-10mA 225 Fall time tf IB1=IB2=-1.0mA 75 Transition frequency fT VCE= -20V, IC= -10mA, f=100MHz 250 ns ns MHz ■ Marking Marking 3N http://www.twtysemi.com [email protected] 4008-318-123 1 of 1