Product specification MMBT3906W Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO -40 V Collector-base voltage VCBO -40 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Total Device Dissipation FR-5 Board PD 150 mW /W Thermal Resistance, Junction-to-Ambient RèJA 833 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT3906W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = -1.0 mA, IB = 0 -40 V Collector-base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -40 V Emitter-base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Base cutoff current IBL VCE = -30 V, VEB = -3.0 V -50 nA Collector cutoff current ICEX VCE = -30 V, VEB = -3.0 V -50 nA HFE IC = -0.1 mA, VCE = -1.0 V IC = -1.0 mA, VCE = -1.0 V IC = -10 mA, VCE = -1.0 V IC = -50 mA, VCE = -1.0 V IC = -100 mA, VCE = -1.0 V DC current gain * VCE(sat) Collector-emitter saturation voltage * 60 80 100 60 30 IC = -10 mA, IB = -1.0 mA -0.25 IC = -50 mA, IB = -5.0 mA Base-emitter saturation voltage * VBE(sat) -0.4 -0.65 IC = -10 mA, IB = -1.0 mA IC = -50 mA, IB = -5.0 mA Current-gain-bandwidth product fT 300 V -0.85 -0.95 IC = -10 mA, VCE = -20 V, f = 100 MHz 250 MHz Output capacitance Cobo VCB = -5.0 V, IE = 0, f = 1.0 MHz 4.5 pF Input capacitance Cibo VEB = -0.5 V, IC = 0, f = 1.0 MHz 10 pF Input impedance hie VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 2.0 12 kÙ Voltage feedback ratio hre VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 0.1 10 X10-4 Small-signal current gain hfe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 100 400 Output admittance hoe VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 3.0 60 ìmhos Noise figure NF VCE = -5.0 V, IC = -100 ìA, RS = 1.0 kÙ, f = 1.0 kHz 4.0 dB Delay time td VCC = -3.0 V, VBE = 0.5 V 35 ns Rise time tr IC = -10 mA, IB1 = -1.0 mA 35 ns Storage time ts VCC = -3.0 V, IC = -10 mA 225 ns Fall time tf IB1 = IB2 = -1.0 mA 75 ns * Pulse test: pulse width 300 ìs, duty cycle 2.0%. Marking Marking 2A http://www.twtysemi.com [email protected] 4008-318-123 2 of 2