Product specification MMBT5550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN Silicon 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 140 V Collector-base voltage VCBO 160 V Emitter-base voltage VEBO 6 V IC 600 mA PD 225 mW RèJA 556 /W PD 300 mW Collector current -continuous Total device dissipation FR-5 board *1 @TA = 25 1.8 Derate above 25 Thermal resistance, junction-to-ambient mW/ Total device dissipation alumina substrate *2 @TA = 25 2.4 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature RèJA 417 TJ, Tstg -55 to +150 mW/ /W * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT5550 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector?emitter breakdown voltage * V(BR)CEO IC = 1.0 mA, IB = 0 140 V Collector?base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 160 V Emitter ?base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Collector emitter cut-off VCE(sat) VBE(sat) ICES VCB = 100 V, IE = 0 100 nA VCB = 100 V, IE = 0, Ta = 100 100 ìA VEB = 4.0 V, IC = 0 50 nA IC = 1.0 mA, VCE = 5 V 60 IC = 10 mA, VCE = 5 V 60 IC = 50 mA, VCE = 5 V 20 250 IC = 10 mA, IB = 1.0 mA 0.15 V IC = 50 mA, IB = 5.0 mA 0.25 V IC = 10 mA, IB = 1.0 mA 1.0 V IC = 50 mA, IB = 5.0 mA 1.2 V VCB = 10 V 50 nA VCB = 75 V 100 nA * Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%. Marking Marking M1F http://www.twtysemi.com [email protected] 4008-318-123 2 of 2