Transistors Transistor T SMD Type Product specification KMBT5551(MMBT5551) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Power Dissipation Pc 300 mW TJ, Tstg -55 to +150 Junction and storage temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-base breakdown voltage VCBO IC = 100 ìA, IE = 0 180 Typ Max Unit V Collector-emitter breakdown voltage * VCEO IC = 1.0 mA, IB = 0 160 V Emitter-base breakdown voltage VEBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO VCB = 120 V, IE = 0 50 nA Emitter cutoff current IEBO VEB = 4.0 V, IC = 0 50 nA DC current gain * hFE IC = 1.0 mA, VCE = 5 V 80 IC = 10 mA, VCE = 5 V 100 IC = 50 mA, VCE = 5 V 50 Collector-emitter saturation voltage * VCE(sat) IC = 50 mA, IB = 5.0 mA Base-emitter saturation voltage * VBE(sat) IC = 50 mA, IB = 5.0 mA Transiston frequency fT * Pulse Test: Pulse Width = 300 VCE=10V,IC=10mA,f=100MHz 300 0.5 1.0 100 V V MHz s, Duty Cycle=2.0%. Marking Marking G1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Transistor T SMD Type Product specification KMBT5551(MMBT5551) Typical Characteristics Fig.1 Max Power Dissipation vs. Ambient Temperature Fig.3 DC Current Gain vs. Collector Current Fig.2 Collector Emitter Saturation Voltage vs.Collector Current Fig.4 Base Emitter Voltage vs.Collector Current Fig.5 Gain Bandwidth Product vs. Collector Current http://www.twtysemi.com [email protected] 4008-318-123 2 of 2