Transistors SMD Type Product specification MMBT6520 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 1 PNP Silicon 0.55 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High Voltage Transistor 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -350 V Collector-base voltage VCBO -350 V Emitter-base voltage VEBO -5 V Base current IB -250 Collector current-continuous IC -500 mA PD 225 mW Total device dissipation FR-5 board *1 @TA = 25 1.8 derate above 25 Thermal resistance, junction-to-ambient RèJA 556 PD 300 mW/ /W Total device dissipation alumina substrate *2 @TA = 25 2.4 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature RèJA 417 TJ, Tstg -55 to +150 mW mW/ /W * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification MMBT6520 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-emitter breakdown voltage V(BR) CE0 IC = -1 mA, IB = 0 -350 Collector-base breakdown voltage V(BR) CB0 IC = -100 ìA, IE = 0 -350 Emitter-base breakdown voltage V(BR) EB0 IE = -10 ìA, IC = 0 Typ Max Unit V -5 Collector cutoff current ICEO VCB = -250 V, IB = 0 -50 nA Emitter cutoff current IEBO VEB = -4 V, IC -50 nA DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage VCE(sat) VBE(sat) VBE(on) Transition frequency fT IC = -1.0 mA, VCE = -10 V 20 IC = -10 mA, VCE = -10 V 30 IC = -30 mA, VCE = -10 V 30 200 IC = -50 mA, VCE = -10 V 20 200 IC = -100 mA, VCE = -10 V 15 IC = -10 mA, IB = -1 mA -0.3 V IC = -20 mA, IB = -2 mA -0.35 V IC = -30 mA, IB = -3 mA -0.5 V IC = -50 mA, IB = -5 mA -1 V IC = -10 mA, IB = -1 mA -0.75 V IC = -20 mA, IB = -2 mA -0.85 V IC = -30 mA, IB = -3 mA -0.9 V IC = -100 mA, VCE = -10 V IC = -10 mA, VCE = -20 V, f = 20 MHz 40 -2 V 200 MHz Collector-base capacitance Ccb VCB = -20 V, f = 1 MHz 6 pF Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 100 pF Marking Marking 2Z http://www.twtysemi.com [email protected] 4008-318-123 2of 2