SMD Type Product specification NDS351AN General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. 1.2A, 30 V. RDS(ON) = 0.25 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount _________________________________________________________________________________ D S G Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - Continuous PD Maximum Power Dissipation (Note 1a) - Pulsed Units 30 V 20 V ± 1.2 A ± 10 (Note 1a) (Note 1b) TJ,TSTG NDS351AN Operating and Storage Temperature Range 0.5 W 0.46 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 SMD Type Product specification NDS351AN Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 30 V TJ =125°C 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA TJ =125°C RDS(ON) Static Drain-Source On-Resistance 0.8 1.7 2 0.5 1.3 1.5 0.19 0.25 0.28 0.37 0.125 0.16 VGS = 4.5 V, ID = 1.2 A TJ =125°C VGS = 10 V, ID = 1.4 A 3.5 Ω ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 1.2 A, 1.8 A S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 125 pF 100 pF 90 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS td(on) Turn - On Delay Time tr Turn - On Rise Time td(off) tf Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge (Note 2) 6 15 ns 15 30 ns Turn - Off Delay Time 14 30 ns Turn - Off Fall Time 18 40 ns 1.9 2.7 nC http://www.twtysemi.com VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 50 Ω VDS = 10 V, ID = 1.2 A, VGS = 4.5 V [email protected] 0.5 nC 0.9 nC 4008-318-123 2 of 3 SMD Type Product specification NDS351AN Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 0.42 A 5 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.2 A (Note 2) 0.8 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. P D (t ) = T J− TA R θJA(t ) = TJ − TA R θJC+RθCA(t ) = I 2D (t ) × RDS(ON ) TJ Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3