Product specification NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 −30 V Features • • • • V(BR)DSS Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device RDS(on) MAX ID MAX 75 mW @ −10 V −2.2 A 110 mW @ −4.5 V −1.8 A 150 mW @ −2.5 V −1.0 A P−CHANNEL MOSFET S Applications • Load Switch • Optimized for Battery and Load Management Applications in G Portable Equipment like Cell Phones, PDA’s, Media Players, etc. D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 85°C Symbol Value Unit VDSS −30 V VGS ±12 −1.5 A 0.48 TA = 25°C PD IDM −15.0 A TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 260 Junction−to−Ambient − t ≤ 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) http://www.twtysemi.com 3 Drain 2 SOT−23 CASE 318 STYLE 21 W 1.25 tp = 10 ms MARKING DIAGRAM/ PIN ASSIGNMENT 1 −3.5 t≤5s Pulsed Drain Current V −2.2 ID 3 [email protected] TRFMG G 1 Gate 2 Source TRF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTR4171PT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4171PT3G SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 of 2 Product specification NTR4171P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = −250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −24 V, TJ = 25°C VGS = 0 V, VDS = −24 V, TJ = 85°C −1.0 −5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V ±0.1 mA VGS(TH) VGS = VDS, ID = −250 mA −1.4 V OFF CHARACTERISTICS V 24 mV/°C TY CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient −0.7 VGS(TH)/TJ Drain−to−Source On−Resistance RDS(on) Forward Transconductance gFS −1.15 3.5 mV/°C VGS = −10 V, ID = −2.2 A 50 75 VGS = −4.5 V, ID = −1.8 A 60 110 VGS = −2.5 V, ID = −1.0 A 90 150 VDS = −5.0 V, ID = −2.2 A 7.0 S 720 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge VGS = 0 V, f = 1.0 MHz, VDS = −15 V 95 65 15.6 VGS = −10 V, VDS = −15 V, ID = −3.5 A 0.7 1.6 QGD 2.6 Total Gate Charge QG(TOT) 7.4 Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −15 V, ID = −3.5 A nC nC 0.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.6 RG 6.1 W 8.0 ns Gate Resistance 1.6 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time td(off) Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time 11 32 tf 14 td(on) 9.0 tr 16 td(off) Fall Time VGS = −10 V, VDS = −15 V, ID = −3.5 A, RG = 6 W VGS = −4.5 V, VDS = −15 V, ID = −3.5 A, RG = 6 W tf ns 25 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time VGS = 0 V, IS = −1.0 A, TJ = 25°C −0.8 tRR 14 Charge Time ta 10 Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A, dISD/dt = 100 A/ms QRR −1.2 V ns 4.0 8.0 nC 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://www.twtysemi.com [email protected] 2 of 2