Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS VGS Conditions Min Typ Max Unit drain-source voltage Tamb = 25 °C - - −20 V gate-source voltage Tamb = 25 °C - - ±8 V ID drain current Tamb = 25 °C; VGS = −4.5 V [1] - - −2 A RDSon drain-source on-state resistance Tj = 25 °C; VGS = −4.5 V; ID = −1 A [2] - 100 120 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name NX2301P Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] NX2301P MG* [1] * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - −20 V VGS gate-source voltage Tamb = 25 °C - ±8 V drain current VGS = −4.5 V ID IDM http://www.twtysemi.com peak drain current Tamb = 25 °C - −2 A Tamb = 100 °C - −1.2 A - −6 A Tamb = 25 °C; single pulse; tp ≤ 10 μs [email protected] [1] 4008-318-123 2 of 3 Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb = 25 °C Min Max Unit [2] - 400 mW [1] - 710 mW - 2.8 W Tsp = 25 °C Tj junction temperature 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C - −0.7 A Source-drain diode source current IS Tamb = 25 °C [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3