Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 1.5 A - 140 165 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV170UN 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 G 2 S TO-236AB (SOT23) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package PMV170UN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code [1] PMV170UN EG% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 1.5 A VGS = 4.5 V; Tamb = 25 °C [1] - 1 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.9 A - 4 A [2] - 325 mW [1] - 455 mW - 1140 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV170UN 20 V, single N-channel Trench MOSFET Symbol Parameter Tj Conditions Min Max Unit junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.7 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 333 385 K/W [2] - 240 275 K/W [2] - 203 235 K/W - 85 100 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV170UN 20 V, single N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 140 165 mΩ VGS = 4.5 V; ID = 1 A; Tj = 150 °C - 208 248 mΩ VGS = 2.5 V; ID = 1 A; Tj = 25 °C - 175 220 mΩ VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C - 237 337 mΩ VDS = 10 V; ID = 1 A; Tj = 25 °C - 3.4 - S total gate charge VDS = 10 V; ID = 1 A; VGS = 4.5 V; - 1.1 1.65 nC QGS gate-source charge Tj = 25 °C - 0.15 - nC QGD gate-drain charge - 0.3 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 83 - pF Coss output capacitance Tj = 25 °C - 37 - pF Crss reverse transfer capacitance - 26 - pF td(on) turn-on delay time VDS = 10 V; ID = 1 A; VGS = 4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 12 - ns td(off) turn-off delay time - 16 - ns tf fall time - 8 - ns - 0.8 1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.7 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4