Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 5.2 A - 17 22 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 SOT23 (TO-236AB) S 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV22EN TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 30 V VGS gate-source voltage drain current ID peak drain current IDM total power dissipation Ptot -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 5.2 A VGS = 10 V; Tamb = 100 °C [1] - 3.3 A - 20 A - 510 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C [2] [1] Tsp = 25 °C - 930 mW - 4170 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 930 mA Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 207 245 K/W [2] - 116 135 K/W - 20 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tamb = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tamb = 150 °C - - 10 µA IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 17 22 mΩ VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 150 °C - 27 34 mΩ VGS = 4.5 V; ID = 4.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 22 29 mΩ VDS = 5 V; ID = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 12 - S ID = 3 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C - 8.6 13 nC - 1.2 - nC - 1.3 - nC - 480 - pF - 110 - pF - 52 - pF - 4 - ns - 15 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 100 - ns tf fall time - 40 - ns - 0.72 1.2 V VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 3 A Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.93 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4