Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ESD protected 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] -8 - 8 V - - -5.3 A - 30 36 mΩ Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV33UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number PMV33UPE Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV33UPE EJ% [1] % = placeholder for manufacturing site code http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV33UPE 20 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s - -5.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.8 A - -17.6 A - 490 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] [2] Tamb = 25 °C [1] Tsp = 25 °C - 980 mW - 4150 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - -1.2 A HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - 222 255 K/W [2] - 111 128 K/W [3] - 74 85 K/W - 25 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV33UPE 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -15 µA IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 30 36 mΩ VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 43 51 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 38 47 mΩ VGS = -1.8 V; ID = -3 A; Tj = 25 °C - 51 65 mΩ VDS = -10 V; ID = -4.4 A; Tj = 25 °C - 16 - S VDS = -10 V; ID = -4.4 A; VGS = -4.5 V; Tj = 25 °C - 14.7 22.1 nC - 2.6 - nC - 2.5 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; ID = -4.4 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 1820 - pF - 208 - pF - 146 - pF - 11 - ns - 30 - ns turn-off delay time - 83 - ns fall time - 39 - ns - -0.7 -1.2 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = -1.2 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4