Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 3.1 A - 28 36 mΩ [1] VGS = 10 V; Tamb = 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 3.1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) http://www.twtysemi.com [email protected] mbb076 S 1 of 3 Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMV37EN Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV37EN KX% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Tj = 25 °C VDS drain-source voltage VGS gate-source voltage ID drain current Min Max Unit - 30 V -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 3.1 A VGS = 10 V; Tamb = 100 °C [1] - 1.9 A - 12.4 A [2] - 380 mW [1] - 520 mW - 1800 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.6 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 3.1 A; Tj = 25 °C - 28 36 mΩ VGS = 10 V; ID = 3.1 A; Tj = 150 °C - 45 55 mΩ IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance VGS = 4.5 V; ID = 2.7 A; Tj = 25 °C - 37 47 mΩ VDS = 5 V; ID = 3 A; Tj = 25 °C - 10 - S VDS = 15 V; ID = 3 A; VGS = 10 V; Tj = 25 °C - 6.5 10 nC - 1 - nC - 1 - nC - 330 - pF - 76 - pF - 36 - pF - 4 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 14 - ns td(off) turn-off delay time - 55 - ns tf fall time - 23 - ns - 0.75 1.2 V VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 3 A Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = 0.6 A; VGS = 0 V; Tj = 25 °C [email protected] 3 of 3