Product specification PMV60EN µTrenchMOS™ enhanced logic level FET Rev. 01 — 15 January 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV60EN in SOT23. 1.2 Features ■ Surface mount package ■ Fast switching. 1.3 Applications ■ Battery management ■ High speed switch. 1.4 Quick reference data ■ VDS ≤ 30 V ■ Ptot ≤ 2 W ■ ID ≤ 4.7 A ■ RDSon ≤ 55 mΩ 2. Pinning information Table 1: Pinning - SOT23 simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol d 3 g 1 2 Top view MBB076 s MSB003 SOT23 http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV60EN µTrenchMOS™ enhanced logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage (DC) ID drain current (DC) - ±20 V Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 4.7 A Tsp = 100 °C; VGS = 10 V; Figure 2 - 2.9 A - 18.8 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Ptot total power dissipation - 2 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 1.7 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.9 A http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV60EN µTrenchMOS™ enhanced logic level FET 4. Characteristics Table 3: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V 1 - 2 V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C IDSS drain-source leakage current Tj = 150°C 0.6 - - V Tj = −55°C - - 2.2 V - - 1 µA VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 2 A; Figure 7 and 8 Tj = 25 °C Tj = 150 °C - - 100 µA - 10 100 nA - 47 55 mΩ - 79.9 93.5 mΩ VGS = 4.5 V; ID = 1.5 A; Figure 7 - 60 72 mΩ ID = 3 A; VDD = 15 V; VGS = 10 V; Figure 13 - 9.4 - nC Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge - 1.2 - nC Qgd gate-drain (Miller) charge - 1.9 - nC Ciss input capacitance - 350 - pF Coss output capacitance - 70 - pF Crss reverse transfer capacitance td(on) turn-on delay time tr VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11 - 50 - pF - 5 - ns rise time - 7 - ns td(off) turn-off delay time - 16 - ns tf fall time - 5.5 - ns - 0.79 1.2 V VDD = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 1.5 A; VGS = 0 V; Figure 12 http://www.twtysemi.com [email protected] 3 of 3