Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applications • • • • Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ Static characteristics RDSon drain-source on-state resistance http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV65XP 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S TO-236AB (SOT23) 017aaa257 6. Ordering information Table 3. Ordering information Type number Package PMV65XP Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV65XP %M9 [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current - -4.3 A VGS = -4.5 V; Tsp = 25 °C VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A - -16 A [2] - 480 mW [1] - 833 mW - 4165 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV65XP 20 V, single P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 230 260 K/W [2] - 125 150 K/W - 25 30 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV65XP 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C - 82 105 mΩ VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 67 92 mΩ VGS = -1.8 V; ID = -1 A; Tj = 25 °C - 87 135 mΩ VDS = -10 V; ID = -2.8 A; Tj = 25 °C - 15 - S total gate charge VDS = -6 V; ID = -2.8 A; VGS = -4.5 V; - 7.7 - nC QGS gate-source charge Tj = 25 °C - 1 - nC QGD gate-drain charge - 1.65 - nC Ciss input capacitance VDS = -20 V; f = 1 MHz; VGS = 0 V; - 744 - pF Coss output capacitance Tj = 25 °C - 65 - pF Crss reverse transfer capacitance - 53 - pF td(on) turn-on delay time VDS = -6 V; VGS = -4.5 V; RG(ext) = 6 Ω; - 7 - ns tr rise time Tj = 25 °C; ID = -1 A - 18 - ns td(off) turn-off delay time - 135 - ns tf fall time - 68 - ns - -0.8 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = -0.9 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4