Product specification PXT4401 Features High current (max. 600 mA) Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Peak collector current ICM 800 mA Peak base current IBM 200 mA W Ptot Total power dissipation *1 *2 *3 0.5 0.8 1.1 Storage temperature Tstg -65 to +150 Junction temperature Operating ambient temperature Tj 150 Ramb -65 to +150 Rth(j-a) Thermal resistance from junction to ambient Thermal resistance from junction to soldering point *1 *2 *3 250 156 113 K/W Rth(j-s) 30 K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard ------footprint. *2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting - -pad for collector 1 cm2. *3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -----pad for collector 6 cm2. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification PXT4401 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO IE = 0; VCB = 60 V 50 nA Emitter cutoff current IEBO IC = 0; VEB = 6 V 50 nA DC current gain * hFE VCE = 1 V, IC = 150 mA collector-emitter saturation voltage * base-emitter saturation voltage * VCEsat VBEsat 100 300 IC = 150 mA; IB = 15 mA 400 mV IC = 500 mA; IB = 50 mA 750 mV IC = 150 mA; IB = 15 mA 950 mV IC = 500 mA; IB = 50 mA 1.2 V Collector capacitance Cc IE = iE = 0; VCB = 5 V; f = 1 MHz 8 pF Emitter capacitance Ce IC = iC = 0; VEB = 500 mV; f = 1 MHz 30 pF Transition frequency fT Turn-on time ton IC = 20 mA; VCE = 10 V; f = 100 MHz ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA Delay time 250 MHz 35 ns td 15 ns Rise time tr 20 ns Turn-off time toff 250 ns Storage time ts 200 ns Fall time tf 60 ns * Pulse test: tp 300 ms; ä 0.02. Marking Marking 2X http://www.twtysemi.com [email protected] 4008-318-123 2 of 2