TYSEMI RB425D

Product specification
RB425D
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Small mold type.(SMD3)
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low IR.
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High reliability.
1.Base
2.Emitter
3.collector
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage (repetitive peak)
DC reverse voltage
Average rectified forward current *
Sym bol
Lim its
Unit
V RM
40
V
VR
40
V
IO
100
mA
I FSM
1
A
Junction tem perature
Tj
125
Storage tem perature
T stg
-40 to + 125
Forward current surge peak (60 Hz 1cyc) *
* Rating of per diode
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
VF
Conditions
Max
Unit
IF = 100 mA
0.55
V
IF = 10 mA
0.34
V
Reverse current
IR
VR = 10 V
Capacitance between terminals
CT
VR = 10 V, f = 1.0 MHz
Min
Typ
30
6.0
A
pF
Marking
Marking
D3L
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4008-318-123
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