TYSEMI RYC002N05

Product specification
RYC002N05
0.9V Drive Nch MOSFET
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
SST3
<SOT-23>
Features
1) High speed switing.
2) Small package(SST3).
3)Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RYC002N05
Taping
T316
3000

(3)
∗1
∗2
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
VGSS
ID
IDP *1
IS
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
ISP
*1
PD
*2
Limits
Unit
50
8
200
800
150
800
V
V
mA
mA
mA
mA
200
mW
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-a)*
Limits
625
Unit
C / W
(1) Source
(2) Gate
(3) Drain
(2)
(1)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
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Product specification
RYC002N05
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Gate threshold voltage
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Min.
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
Static drain-source on-state
resistance
RDS (on)*
-
3.0
9.0
Forward transfer admittance
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250
RG=10
Rise time
Turn-off delay time
Fall time

ID=200mA, VGS=1.5V
ID=100mA, VGS=1.2V
ID=10mA, VGS=0.9V
S
ID=200mA, VDS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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