TYSEMI WNM2020

Product specification
WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V)
Rds(on) (ȍ)
[email protected] VGS=4.5V
[email protected] VGS=2.5V
20
[email protected] VGS=1.8V
SOT-23
Descriptions
The WNM2020 is N-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
technology and design to provide excellent RDS
(ON)
D
3
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2020 is Pb-free.
1
G
2
S
Features
Pin configuration (Top view)
z
Trench Technology
z
Supper high density cell design
z
Excellent ON resistance
z
Extremely Low Threshold Voltage
z
Small package SOT-23
3
W28*
2
1
W28 = Device Code
*
Applications
= Month (A~Z)
Marking
Order information
z
DC-DC converter circuit
z
Small Signal Switch
z
Load Switch
z
Level Shift
Device
Package
Shipping
WNM2020-3/TR
SOT-23
3000/Reel&Tape
z
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Product specification
WNM2020
Absolute Maximum ratings
Parameter
Symbol
10 S
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±6
TA=25°C
Continuous Drain Current a
TA=70°C
TA=25°C
Maximum Power Dissipation a
TA=70°C
TA=25°C
Continuous Drain Current b
TA=70°C
TA=25°C
Maximum Power Dissipation b
TA=70°C
ID
PD
ID
PD
Unit
V
0.90
0.83
0.72
0.66
0.38
0.32
0.24
0.20
0.79
0.71
0.63
0.57
0.29
0.24
0.19
0.15
A
W
A
W
Pulsed Drain Current c
IDM
1.4
A
Operating Junction Temperature
TJ
-55 to 150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
Symbol
t ” 10 s
Steady State
t ” 10 s
Steady State
Steady State
RșJA
RșJA
RșJC
Typical
Maximum
270
325
320
385
360
420
425
520
260
300
a
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR4 board using minimum pad size, 1oz copper
c
Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d
Repetitive rating, pulse width limited by junction temperature TJ=150°C.
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Unit
°C/W
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Product specification
WNM2020
o
Electronics Characteristics (Ta=25 C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS =16 V, VGS
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS =±5V
VGS(TH)
VGS = VDS, ID = 250uA
20
V
=0V
1
uA
±5
uA
0.58
0.85
V
VGS = 4.5V, ID = 0.55A
220
310
VGS = 2.5V, ID = 0.45A
260
360
VGS = 1.8V, ID = 0.35A
320
460
VDS = 5 V, ID = 0.55A
2.0
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
RDS(on)
gFS
0.45
mŸ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
50
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 10 V,
0.06
Gate-to-Source Charge
QGS
ID = 0.55A
0.15
Gate-to-Drain Charge
QGD
VGS = 0 V, f = 100 kHz, VDS =
pF
13
10 V
8
1.15
nC
0.23
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
22
Rise Time
tr
VDD=10V,
Turn-Off Delay Time
td(OFF)
ID =0.55A, RG=6Ω
Fall Time
tf
80
VGS=4.5V,
ns
700
380
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS = 0 V, IS = 0.35A
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0.5
0.7
1.5
V
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