TYSEMI WNM2023

Product specification
WNM2023
Single N-Channel, 20V, 3.2A, Power MOSFET
VDS (V)
Rds(on) (Ω)
[email protected] VGS=4.5V
[email protected] VGS=2.5V
20
[email protected] VGS=1.8V
SOT-23-3L
Descriptions
D
3
The WNM2023 is N-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
technology and design to provide excellent RDS
(ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
1
2
Standard Product WNM2023 is Pb-free.
G
S
Pin configuration (Top view)
Features
3
z
Trench Technology
z
Supper high density cell design
z
Excellent ON resistance for higher DC current
z
Extremely Low Threshold Voltage
z
Small package SOT-23-3L
W04*
2
1
W04 = Device Code
*
= Month (A~Z)
Marking
Applications
Order information
z
Driver for Relay, Solenoid, Motor, LED etc.
z
DC-DC converter circuit
z
Power Switch
z
Load Switch
z
Charging
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Device
Package
Shipping
WNM2023-3/TR
SOT-23-3L
3000/Reel&Tape
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Product specification
WNM2023
Absolute Maximum ratings
Parameter
Symbol
10 S
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TA=25°C
Continuous Drain Current a
TA=70°C
TA=25°C
Maximum Power Dissipation a
TA=70°C
TA=25°C
Continuous Drain Current b
TA=70°C
TA=25°C
Maximum Power Dissipation b
TA=70°C
ID
PD
ID
PD
Unit
V
3.2
2.9
2.5
2.3
0.8
0.7
0.5
0.4
2.9
2.7
2.3
2.1
0.6
0.5
0.4
0.3
A
W
A
W
Pulsed Drain Current c
IDM
10
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
Symbol
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
RθJA
RθJA
Typical
Maximum
125
150
140
175
150
180
165
210
60
75
RθJC
a
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR4 board using minimum pad size, 1oz copper
c
Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d
Repetitive rating, pulse width limited by junction temperature TJ=150°C.
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Unit
°C/W
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Product specification
WNM2023
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250uA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS =16 V, VGS = 0V
1
uA
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±8V
±100
nA
VGS(TH)
VGS = VDS, ID = 250uA
0.6
1
V
VGS = 4.5V, ID = 3.2A
38
47
VGS =-2.5V, ID =3.1A
44
55
VGS = 1.8V, ID = 1.5A
52
66
VDS = 5 V, ID =3.1A
11
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
RDS(on)
gFS
0.45
mΩ
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS =4.5 V, V DS =10 V,
0.45
Gate-to-Source Charge
QGS
ID = 3.1A
0.6
Gate-to-Drain Charge
QGD
500
VGS = 0 V, f = 1.0 MHz, VDS =
pF
62
10 V
58
8.05
nC
2.65
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
5
8
VGS = 4.5 V, VDS = 10 V,
6
9
RL=3.5 Ω, RG=6 Ω
30
45
8
12
0.62
1.5
ns
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS = 0 V, IS = 1.0A
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0.5
V
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